Lateral Growth of MoS 2 2D Material Semiconductors Over an Insulator Via Electrodeposition
نویسندگان
چکیده
منابع مشابه
Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe<sub>2</sub> versus MoS<sub>2</sub>
Layered semiconductors based on transition-metal chalcogenides usually cross from indirect bandgap in the bulk limit over to direct bandgap in the quantum (2D) limit. Such a crossover can be achieved by peeling off a multilayer sample to a single layer. For exploration of physical behavior and device applications, it is much desired to reversibly modulate such crossover in a multilayer sample. ...
متن کاملFree Vibration Analysis of 2D Functionally Graded Annular Plate considering the Effect of Material Composition via 2D Differential Quadrature Method
This study investigates the free vibration of the Two-Dimensional Functionally Graded Annular Plates (2D-FGAP). The theoretical formulations are based on the three-dimensional elasticity theory with small strain assumption. The Two-Dimensional Generalized Differential Quadrature Method (2D-GDQM) as an efficient and accurate semi-analytical approach is used to discretize the equations of motion ...
متن کاملSynthesis and Crystal Growth of Sb2S3 Nanorods Using Iodine as an Initiator Material via Electrochemical Mechanism in Hydrothermal Condition
Crystalline antimony sulfide (Sb2S3) with nanorods morphology was successfully prepared via hydrothermal method by the reaction of elemental sulfur, antimony and iodine as starting materials with high yield at 180°C for 24h.Using oxidation reagents like iodine as an initiator of redox reaction to prepare Sb2S3 is reported for first time. Crystal growth of Sb2S3 was done by increasing reaction t...
متن کامل2D crystal semiconductors: Intimate contacts.
news & views devices. Furthermore, separation and recombination of photoinduced electron– hole pairs at a heterojunction interface are primary mechanisms governing the operation of solar cells, photodetectors and light-emitting devices. Both Gong and collaborators and Duan and colleagues managed to electrically address the lateral heterojunctions and perform transport measurements to investigat...
متن کامل2 00 2 Defect correlations , metal - insulator transition , and magnetic order in ferromagnetic semiconductors
Diluted ferromagnetic III-V semiconductors typically show a high degree of compensation. Compensation is connected to the presence of comparable densities of charged defects of either sign. This naturally leads to the development of strong correlations between defect positions during growth and annealing. We show that these correlations are required to understand the experimentally observed tra...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Advanced Electronic Materials
سال: 2021
ISSN: 2199-160X,2199-160X
DOI: 10.1002/aelm.202100419